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REO-Ge: A Solution For Semiconductor Processing

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Problem Statement

Although there are many variations of germanium-based semiconductors, most of the semiconductor manufacturing sector has focussed mainly on reducing the semiconductor\'s overall power consumption. The oxide layer situated on top of germanium-based semiconductors can slowly be depleted during the time they spend powering circuits and will cause them to become exposed and unprotected once again. The need for various semiconductors to include an oxide layer that sufficiently protects the semiconductor wafers they lie on is important.

Solution Statement

This technology enables the fabrication and manufacturing of complementary metal-oxide-semiconductor (CMOS) devices by integrating promising rare-earth oxide (REO) thin-film material on a germanium (Ge) semiconductor wafer. Through integration technology of REO on Ge wafer with high band offsets and fewer interfacial defects, it can cater for the continuous demand of low power consumption and high-speed device operation, thus revealed potential improvements for replacing the current silicon (Si) based CMOS technology.


FOUNDER


Assoc. Prof. Ir. Dr. Wong Yew Hoong
Department of Mechanical Engineering
Faculty of Engineering, UM
yhwong@um.edu.my

URL CV UM Experts:
https://umexpert.um.edu.my/yhwong

Academic Qualification:

  • PhD, KEJURURTERAAN BAHAN ELEKTRONIK, USM
  • BEng.(Hons)(Material), KEJURUTERAAN BAHAN, USM
 

Area of Expertise:

  • Electronic Packaging Materials (Die-attach Materials (Metallic Alloys), Corrosion And Electromigration Behaviour)
  • Material Processing Technology (Coating And Thin Film Deposition, Semiconductor / Electronic Device Fabrication, Characterization)
  • Nano Materials (Nanostructures, Characterization)
  • Electronic Materials (Semiconductors, Oxides, Nitrides, Polymeric Materials, Thin Films And Coatings, Characterization)
  • Thin-film Dielectrics (High Dielectric Constant Materials, Oxides, Nitrides, Polymer, Characterization)

Last Updated: 07/08/2021