1. Technology Overview
The present invention is a method for producing a non-polar a-plane GaN thin film on an r-plane sapphire substrate using metal organic chemical vapour deposition (MOCVD) technique. Particularly, the method provides suitable growth conditions for GaN layer during MOCVD by controlling V/III ratio, reaction temperature and flow rate of reactants, but not limited thereto. It was found that such method could provide non-polar a-plane GaN thin film on r-plane sapphire substrate with reduced lattice mismatch between each layer.
- UMCIC File Number: 603/1114
- Patent: PI 2016 703999
- Patent status: Pending
- Malaysia patent: Method for Producing A Non-Polar A-Plane Galllium Nitride (Gan) Thin Film on an R-Plane Sapphire Substrate.
- This technology is currently available for licensing and commercialisation.
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