A Method for Producing an Epitaxial Layer Of Semi-Polar Gallium Nitride (Gan) On M-Plane Sapphire Substrate

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1. Technology Overview

The invention discloses a method to achieve a single-crystalline with high-quality semi-polar gallium nitride (GaN) hetro-epitaxial layers grown on m-plane sapphire by metalorganic chemical vapour deposition (MOCVD). The method comprises the steps of treating the m-plane sapphire substrate layer by a hydrogen 10 cleaning process to remove contamination ; performing a nitridation process on the substrate layer induces the formation of A1N layers with slanted facets on the surface of the sapphire substrate; depositing a GaN nucleation layer on top of the substrate layer; performing a re-crystallisation process on the GaN nucleation layer to change its crystallographic phase of the GaN growth; depositing a GaN buffer layer on top of the GaN nucleation layer ; and depositing GaN overgrowth layer on top of the GaN buffer layer.

  • UMCIC File Number: 603/1105
  • Patent: PI 20167 01553
  • Patent status: Pending
  • Malaysia patent: A Method for Producing an Epitaxial Layer Of Semi-Polar Gallium Nitride (Gan) On M-Plane Sapphire Substrate
  • This technology is currently available for licensing and commercialisation.

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